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Capsule Types Devices

Rectifier Diodes

Phase Control Thyristors

First-Turn-off Thyristors

High Frequency Thyristors

Bi-Directional Thyristors

Fast Decovery Dlodes

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High Frequency Thyristors

 

Features

Full Diffuse Crafts

Distributed extending and mplifying gate Structure

Good Dynamic Characteristics

Excellent high Frequency Performance, Suitable for 2.5KHz-10KHz

Low switching consumption

Disc Type ceramic seal

Double Side cooling

Applications

Inverter

Welding Machine

Wave chopper 

Inductor

Various Coercive converter

Remark

IGT , VGT , IH are the tested value at 25'CC and the other parameters in the table are under Tjm,

excepting additional explanations.

I2 t=I2 TSM × Tw/2:Tw=full bottomed value of sine and half wave current. On the condition

current is 0Hz: I 2 t=0.005I 2 TSM (AA 2 S)

On The Condition Current s 60Hz TSM (88.3ms)=II (110ms)×× 1.066,Tj=TT

I2t(8.3ms)=II 2 t(10ms) 0.943,Tj=TT

Gate Lead: White Or achromaticity

Cathode lead (when Required): red

 
Model Vdrm Vrrm It(AV) ITF/F Tq ITSM dv/dt di/dt Idrm  IGT VGT IH

VTM/ITM

RTH
(J-HS)

 Tjm KN Outline
    THS55°C THS55°C 100°C 10MS     Irrm 25°C 25°C 25°C 25°C        
  V A A/KHz us KA V/us A/us mA mA V mA V/A °C/W °C KN (FIG)
MKG200A

800-1600

 200 200/6 10-16 2.4 200 200 30 30-200 0.8-2.5 20-250 3.2/600 0.055 115 5.3-10
MKG300A 800-1600 300 300/6 10-16 3.6 200 200 40 30-250 0.8-3.0 20-400 3.2/900 0.035 115 10-20
MKG400A 800-1600 400 300/10 8-10 4.8 200    40 30-250 0.8-3.0 20-400 3.2/1200 0.035 115 10-20
MKG500A 800-1600 500 500/6 10-16 6 200 200 50 30-250 0.8-3.0 20-400 3.2/1500 0.032 115 15-20
MKG600A 800-1600 600 600/6 12-18 7.2 200 250 60 30-250 0.8-3.0 20-400 3.2/1800 0.030 115 18-25
MKG800A 800-1600 800 800/6 12-18 9.6 200 250 80 30-250 0.8-3.0 20-400 3.2/2400 0.024 115 19-25

MKG1000A

 800-1600 1000 1000/6 12-18 12 200 250 100 30-300 0.8-3.0 20-400 3.2/3000 0.022 115 21-30
MKG1200A 800-1600 1200 800/6 8-15 14 200 250 100 30-300

0.8-3.0

 20-400 3.2/3000 0.022 115 21-30

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