Welcome to Modern Power Semiconductor Pvt. Ltd. -Ahmedabad, Gujarat, India.

TO-18 PACKAGE TRANSISTOR Specification :

Device	PD(mW) @TA = 25°C	lC (mA) max	VCBO (V) min	VCEO (V) min	VEBO (V) min	ICBO VCB (nA) @ (V) max		hFE @ lc VCE (mA) (V) min max				VCE(SAT) Vbe(SAT) IC IB (V) & (V) (mA) (mA) @ max min max					Cob (pF) max	ft @ lc (MHz) (mA)		NF @ Freq (dB) (KHz) max
BC107	300	200	50	45	6	15	40	110	450	2	5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	10
BC107A	300	200	50	45	6	15	40	110	220	2	5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	10
BC107B	300	200	50	45	6	15	40	200 40	450	2 0.01	5 5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	10
BC108	300	200	30	20	5	15	20	110	800	2	5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	10
BC108A	300	200	30	20	5	15	20	110	220	2	5	0.25 0.6	0.55	0.7*	2 10 100	5 0.5 5	2.5	300	10	10
BC108B	300	200	30	20	5	15	20	200 40	450	2 0.01	5 5	0.25 0.6	0.55	0.7*	2 10 100	5 0.5 5	2.5	300	10	10
BC108C	300	200	30	20	5	15	20	420 100	800	2 0.01	5 5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	10
BC109	300	200	30	20	5	15	20	200	800	2	5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	4
BC109B	300	200	30	20	5	15	20	200 40	450	2 0.01	5 5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	4
BC109C	300	200	30	20	5	15	20	420 100	800	2 0.01	5 5	0.25 0.6	0.55	0.7*	2 10 100	5* 0.5 5	2.5	300	10	4
BC177	300	200	50	45	5	15	40	75	220	2	5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC177A	300	200	50	45	5	15	40	110	220	2	5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC177B	300	200	50	45	5	15	40	200 40	450	2 0.01	5 5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC178	300	200	30	25	5	100	20	75	450	2	5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC178A	300	200	30	25	5	100	20	110	220	2	5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC178B	300	200	30	25	5	100	20	200 40	450	2 0.01	5 5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC178C	300	200	30	25	5	100	20	420 100	800	2 0.01	5 5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	10
BC179	300	200	30	20	5	100	20	110	450	2	5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	4
BC179A	300	200	30	20	5	100	20	110	220	2	5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	4	1
BC179B	300	200	30	20	5	100	20	200 40	450	2 0.01	5 5	0.3	0.6	0.75*	2 10	5* 0.5	4	150	10	4
2N910	500		100	80*	7	25	75	75 35		10 0.1	10 10	0.4 1.2	0.6	0.8 0.9	10 50	1 5	15	60	50	12	1
2N911	500		100	80*	7	25	75	35 20		10 0.1	10 10	0.4 1.2	0.6	0.8 0.9	10 50	1 5	15	50	50	15	1
2N915	360	100	70	50	5	10	60	50	200	10	5	1		0.9	10	1	3.5	250	10
2N916	360	100	45	25	5	10	30	50	200	10	1	0.5		0.9	10	1	6	300	10
2N929	300	30	45	45	5	10	45	40 60	120 350	0.01 0.5 10	5 5 5	1	0.6	1	10	0.5	8	30	0.5	4	1
2N930	300	30	45	45	5	10	45	100 150	300 600	0.01 0.5 10	5 5 5	1	0.6	1	10	0.5	8	30	0.5	3	1
2N956	500	500	75	50*	7	10	60	100 20 35 75 40	300	150 0.01 0.1 10 500	10 10 10 10 10	1.5		1.3	150	15	25	70	50

Device

PD(mW) @TA = 25°C

lC (mA)

max

VCBO
(V)

min

VCEO
(V)

min

VEBO (V)

min

ICBO VCB
(nA) @ (V)

max

hFE @ lc VCE
(mA) (V)

min max

VCE(SAT) Vbe(SAT) IC IB (V) & (V) (mA) (mA)
@
max min max

Cob (pF)

max

ft @ lc
(MHz) (mA)

ton
(dB)

(tof)
(ns)

2N2221

500

800

40
20 25
35 20

120

150
0.1
1
10 500

10
10 10
10 10

0.4
1.6

1.3
2.6

150
500

15
50

250

2N2221A

500

800

40 20
25
35
20 25

120

150
0.1
1
10
150
500

10
10
10
10
1
10

0.3 1

0.6

1.2
2

150
500

15
50

250

285

Device

PD(mW) @TA = 25°C

lC (mA)

max

VCBO
(V)

min

VCEO
(V)

min

VEBO (V)

min

ICBO VCB
(nA) @ (V)

max

hFE @ lc VCE
(mA) (V)

min max

VCE(SAT) Vbe(SAT) IC IB (V) & (V) (mA) (mA)
@
max min max

Cob (pF)

max

ft @ lc
(MHz) (mA)

ton
(ns)
max

(tof)
(ns)
max

2N2222

500

800

100 35 50
75 30

300

150 0.1
1
10 500

10
10
10
10
10

0.4 1.6

1.3 2.6

150 500

15 50

250

2N2222A

500

800

100
35 50 75 50
40

300

150
0.1
1
10 150
500

10
10
10
10
1.0
10

0.3
1

0.6

1.2
2

150
500

15
50

300

285

Device	PD(mW) @TA = 25°C	lC (mA) max	VCBO (V) min	VCEO (V) min	VEBO (V) min	ICBO VCB (nA) @ (V) max		hFE @ lc VCE (mA) (V) min max				VCE(SAT) Vbe(SAT) IC IB (V) & (V) (mA) (mA) @ max max				Cob (pF) max	ft @ lc (MHz) (mA)			ton (ns) max		(tof) (ns) max
2N2906A	400	600	60	60	5	10	50	40 40 40 40 40	120	150 0.1 1 10 500	10 10 10 10 10	0.4 T.6	1.3 2.6	150 500	15 50	8		200	50		^45		100
2N2907	400	600	60	40	5	20	50	100 35 50 75 30	300	150 0.1 1 10 500	10 10 10 10 10	0.4 1.6	1.3 2.6	150 500	15 50	8		200	50		45		100
2N2907A	400	600	60	60	5	10	50	100 75 100 100 50	300	150 0.1 1 10 500	10 10 10 10 10	0.4 1.6	1.3 2.6	150 500	15 50	8		200	50		45		100

Device	PD(mW) @TA = 25°C	lC (mA) max	VCBO (V) min	VCEO (V) min	VEBO (V) min	ICBO VCB (nA) @ (V) max		hFE @ lc VCE (mA) (V) min max				VCE(SAT) Vbe(SAT) IC IB (V) & (V) (mA) (mA) @ max min max					Cob (pF) max	ft @ lc (MHz) (mA)		ton (ns) max	(tof) (ns) max
2N706	300	200	25	20*	3	500	15	20		10	1	0.6		0.9	10	1	6	200	10	40	75
2N708	360	200	40	15	5	25	20	30 15	120	10 0.5	1 1	0.4	0.72	0.8	10	1	6	300	10	40	75
2N2368	360	200	40	15	4.5	400	20	20 10	60	10 100	1 2	0.25	0.7	0.85	10	1	4	400	10	12	15
2N2369	360	200	40	15	4.5	400	20	40 20	120	10 100	1 2	0.25	0.7	0.85	10	1	4	500	10	12	18
2N2369A	360	200	40	15	4.5	400	20	40 40 30 20	120	10 10 30 100	1 0.35 0.4 1	0.2 0.25 0.50	0.7	0.85 1.15 1.6	10 30 100	1 3 10	4	500	10	12	18
BSX19	360	200	40	15	4.5	400	20	20 10	60	10 100	1 2	0.25 0.6 0.3	0.7	0.85 1.5	10 100 10	1 10 0.6	4	400	10	12	15
BSX20	360	200	40	15	4.5	400	20	40 20	120	10 100	1 2	0.25 0.6 0.3	0.7	0.85 1.5	10 100 10	1 10 0.3	4	500	10	12	18
2N869	360	200	25	18	5	10	15	20	120	10	5	1.0		1.0	10	1	9	100	10
2N995	360	200	20	15	4	5	15	25 35 25	140	1 20 50	1 1 1	0.2		0.95	20	2	10	100	10
2N3250	360	200	50	40	5			40 45 50 15	150	0.1 1 10 50	1 1 1 1	0.25 0.5	0.6	0.9 1.2	10 50	1 5	6	250	10	70	225
2N3251	360	200	50	40	5			80 90 100 30	300	0.1 1 10 50	1 1 1 1	0.25 0.5	0.6	0.9 1.2	10 50	1 5	6	300	10	70	250